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  Datasheet File OCR Text:
 ST 2SC1815
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L Symbol hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB NF Min. 70 120 200 350 25 80 Typ. 2 1 Max. 140 240 400 700 0.25 1 0.1 0.1 3 1 Unit V V A A MHz pF dB Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 50 400 125 -55 to +150 Unit V V V mA mA mW
O O
C C
at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10K
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005
ST 2SC1815
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005


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